Silicon Carbide Semiconductor Devices Market Size, Share, and Industry Analysis, By Device (SiC Discrete Device and SiC Module), By Wafer Size (1 inch to 4 inches, 6 inches, 8 inches, and 10 inches & above), By End-user (Automotive, Energy & Power, Industrial, Transportation, Telecommunication, and Others), and Regional Forecast, 2025-2032

The global silicon carbide semiconductor devices market is expanding owing to the rising adoption of SiC semiconductor devices in electronics and an extensive variety of applications accessible by SiC semiconductor devices in electrical automobile charging systems.

Silicon carbide (SiC) is a composite semiconductor base material composed of silicon and carbide. SiC provides a number of advantages as it can be doped through n-type with nitrogen or phosphorous besides p-type with boron, beryllium, gallium or aluminum. While several variabilities and purities of silicon carbide occur, semiconductor-grade eminence silicon carbide has only appeared for deployment in the past few decades.

Furthermore, their essential properties consist of high temperature, low ON resistance, high frequency, and high voltage performance, which marks them as superior to silicon. In addition, SiC has become prevalent in the automotive sector as a result of the business's demand for high reliability, quality, and efficiency. SiC can offer high voltage demands with the process. Silicon carbide has the potential to escalate electric vehicle driving expenses by increasing the complete system efficacy, especially inside the inverter system, which proliferates the vehicle's inclusive energy conservation while decreasing the size and subsequent weight of battery management systems. For instance,

• Goldman Sachs forecasts that exploiting silicon carbide in electronic vehicles can decrease EV industrial costs and cost of ownership by approximately USD 2,000 per vehicle. SiC also enhances EV fast-charging processes, usually operating in the kV range, where it can decrease overall system loss by nearly 30%, surge power density by 30%, and decrease the component total by 30%. This efficacy allows fast charging stations to be faster, smaller, and more cost-effective.

Impact of Generative AI on the Silicon Carbide Semiconductor Devices Market

Generative AI has a significant impact on the market. AI can assist in more efficient and innovative designs for semiconductor devices. By using AI algorithms to stimulate various design possibilities, manufacturers can explore a wide range of options faster than traditional methods. This led to faster prototyping, fewer iterations, and optimized device performance, boosting the market growth.

Silicon Carbide Semiconductor Devices Market Driver

Growing Adoption of Power Electronics among Electronic Devices to Drive Market Growth

Power electronics plays a crucial role in the global electrical substructure in power electronics as it necessitates electronic devices that provide enhanced efficiency, which is significant in mitigating switching damages. Inside the power electronics business, there is a group of power devices that are accountable for transforming discontinuous current to direct current or vice versa inside the systems that are engineered to minimize energy dissipation and strengthen system efficiency. Thus, these features sustainably help devices such as power supplies, data centers, solar or wind modules, and converters.

Silicon Carbide Semiconductor Devices Market Restraint

Higher Cost of IC Devices among Manufacturers May Impede the Market Growth

The major factor that contributes to the higher cost of SiC devices is the expensive SiC substrate, which considerably exceeds the cost of silicon wafers. The transferal process that is essential to produce SiC demands extensive energy to extend high temperatures, which yields absolute boules that are no lengthier than 25mm in length, with comprehensive growth times. This leads to a cost escalation as related to silicon wafers. Furthermore, other cost factors comprise epitaxy and device fabrication that involves high temperatures and expensive consumables.  Hence, the high cost of SiC devices impedes the market growth.

Silicon Carbide Semiconductor Devices Market Opportunity

Continuous Developments to Improve the Quality of SiC Substrate and Epitaxy Boost Market Growth

Constant improvements in SiC substrate superiority and epitaxy processes are essential factors in the ongoing developments of SiC device manufacturing. Researchers are thoroughly addressing faults that are in SiC substrates, including crystalline stacking faults, micro pipes, scratches, stains, and surface particles, which reduce the performance of the SiC device. Efforts toward preserving reliable substrate eminence, even though greater wafers, resist the advanced density of faults. These advancements are composed to elevate SiC device reliability, quality, and cost-effectiveness and offer growth opportunities for the SiC market. Therefore, these factors are anticipated to drive market growth over the upcoming years.

Segmentation

Key Insights

The report covers the following key insights:

• Micro Macro Economic Indicators


• Drivers, Restraints, Trends, and Opportunities


• Business Strategies Adopted by Key Players


• Consolidated SWOT Analysis of Key Players

Analysis by Device

Based on device, the market is subdivided into SiC discrete device and SiC module.

The SiC module segment held the highest market share in 2023. These modules operate silicon carbide as a switching material that bids higher efficiency in power conservation with compact heat energy loss, which aids as a critical component in industrial, automotive, and power & energy sectors. These components are chosen over silicon-based devices owing to the varied bandgap of SiC that allows low switching losses and higher frequencies, along with the capability to operate at important voltages and temperatures for difficult applications such as industrial, automotive, and energy & power. Therefore, these factors accelerate the segmental growth.

Analysis by Wafer Size

Based on wafer size, the market is divided into 1 inch to 4 inches, 6 inches, 8 inches, and 10 inches & above.

The 1-4 inches segment held the highest market share in 2023. These wafers have a thickness of 350 ± 25 micrometers. They are existing in N-type and P-type variations. The P-type substrate of silicon carbide wafers is utilized in the manufacturing of power procedures, including insulated gate bipolar transistors (IGBT). Moreover, the N-type substrates are covered with nitrogen to increase conductivity in power devices.

Additionally, the beneficial mechanical characteristics of the variants are companionable with existing device fabrication processes. Furthermore, the 1 to 4 inches of silicon carbide wafers are able to be mass-formed, making them cost-effectual, and the petition is anticipated to stem mostly from business applications. They also aid in reducing the size of the equipment, which is a further benefit for their implementation during the forecast period. Therefore, these factors accelerate the segmental growth.

Analysis by End-user

Based on end-user, the silicon carbide semiconductor devices market is subdivided into automotive, energy & power, industrial, transportation, telecommunication, and others.

The automotive segment accounts for the largest market share. The end-user is additionally segmented into electric vehicles and IC automobiles. The advancement of the automotive segment can be accredited to the increasing implementation of SiC semiconductors in IC automobiles and electric vehicles. Silicon carbide semiconductors offer characteristics including stability for high-frequency switches and less energy damage, making them ultimate for application in chargers, converters, and inverters. Furthermore, these semiconductors aid in improving energy efficiency and decreasing the weight of the electronics, thus increasing the complete power compactness and efficiency. These benefits are expected to drive the sector over the coming years.

Regional Analysis

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Based on region, the market has been studied across North America, Europe, Asia Pacific, South America, and the Middle East & Africa.

North America is anticipated to witness the highest CAGR over the forecast period. The regional market growth is attributed to the existence and absorption of protruding players, including ON SEMICONDUCTOR CORPORATION (on semi) and Gene Sic Semiconductor, which has a widespread customer base, driving the market growth in the region. Moreover, the absorption of these protuberant players in this region boosts power electronics manufacturers to implement innovative SiC semiconductor devices for enhanced efficiency. Moreover, prominent regional players are taking strategic advantages, driving the regional growth.

Asia Pacific accounted for the largest market share in the global silicon carbide semiconductor devices market in 2023. The regional growth is driven by an increasing number of electric vehicles and associated charging substructures in China. In addition, the rising interest in renewable energy bases fuels the market development of silicon carbide in Asia Pacific, which drives the market growth.

The Europe market is projected to exhibit steady growth over the forecast period. The regional growth is due to the European Union’s supporting electric vehicles as part of its efforts to reduce carbon emissions. Moreover, companies such as STMicroelectronics, Bosch are investing in SiC technology to meet the demand for more efficient power electronics in the automotive sector.

Moreover, South America witnessed significant growth in the market. Countries such as Brazil and Chile have strong potential for solar and wind energy generation. SiC semiconductor devices are ideal for power conversion systems in renewable energy projects due to their high efficiency and ability to handle high voltages and temperatures.

Additionally, the Middle East and Africa market is anticipated to grow over the coming years. Countries such as the UAE, Saudi Arabia, and South Africa are investing heavily in power projects as part of their long-term strategies, further driving market growth.

Key Players Covered

The global silicon carbide semiconductor devices market is fragmented, with a large number of group and standalone providers. In Asia Pacific, the top 5 players account for around 35% of the market.

The report includes the profiles of the following key players:

• STMicroelectronics (Netherlands)


• Infineon Technologies AG (Germany)


• ROHM Semiconductor (Japan)


• Fuji Electric (Japan)


• ON Semiconductor (U.S.)


• Toshiba Corporation (Japan)


• Mitsubishi Electric (Japan)


• GeneSiC Semiconductor (U.S.)


• Wolfspeed (U.S.)

Key Industry Developments

• In September 2024, STMicroelectronics introduced a new group of silicon carbide power equipment for next-generation EV traction inverters. The launch offers a range of high-power industrialized applications, such as energy storage solutions, solar inverters, and data centers, considerably improving energy efficacy for these increasing applications.


• In March 2024, Infineon Technologies AG launched the next generation of silicon carbide (SiC) MOSFET channel technology for high-performance organizations that drive decarbonization. The introduction of technology enables the quicker design of more cost-optimized, reliable, compact, and highly effectual systems, harvesting energy savings and decreasing CO2 for every watt mounted in the field.